منابع مشابه
Edge-state tunneling through ultrashort gates.
19 AS,-. 0 AZC Ohom on n ore 6 n~r,.s., -68 o-n Oh , by loc. aib The gating of edge states by ultrashort gates (50 nm) placed on normal quantum Hall effect devices is studied. In longer-gate devices, plateaus in the longitudinal resistance are found when an integer number of edge states is reflected from the gate. The expected quantized values of longitudinal resistance do not appear in the ult...
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ژورنال
عنوان ژورنال: Canadian Medical Association Journal
سال: 2005
ISSN: 0820-3946,1488-2329
DOI: 10.1503/cmaj.050287